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Proceedings Paper

Design of optical channel waveguides in SiO2 by ion implantation
Author(s): H. De los Reyes; E. G. Lizarraga-Medina; D. Salazar; R. Rangel-Rojo; G. V. Vázquez; A. Oliver; S. Achenbach; M. Börner; H. Márquez
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Paper Abstract

Design of straight and S-bend optical channel waveguides based on silver ion implantation in SiO2 substrates is presented. 3D Beam Propagation Method (BPM) calculations are used for the design of the waveguides based on step index profiles produced from a sequential multiple ion implantation process. An analysis of modal optical confinement was done by means of the Effective Index Method (EIM) for selecting the right dimensions of the channel waveguides. Core index values between 1.4623-1.4662 are obtained, depending on the fluence, are considered. Depth and width for the waveguides were chosen to provide single mode operation. Bending losses are determined as function of bending radius, refractive index change (Δn), and wavelength.

Paper Details

Date Published: 20 August 2015
PDF: 8 pages
Proc. SPIE 9556, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, 955617 (20 August 2015); doi: 10.1117/12.2187117
Show Author Affiliations
H. De los Reyes, Ctr. de Investigación Científica y de Educación Superior de Ensenada B.C. (Mexico)
E. G. Lizarraga-Medina, Ctr. de Investigación Científica y de Educación Superior de Ensenada B.C. (Mexico)
D. Salazar, Ctr. de Investigación Científica y de Educación Superior de Ensenada B.C. (Mexico)
R. Rangel-Rojo, Ctr. de Investigación Científica y de Educación Superior de Ensenada B.C. (Mexico)
G. V. Vázquez, Ctr. de Investigaciones en Óptica, A.C. (Mexico)
A. Oliver, Univ. Nacional Autónoma de México (Mexico)
S. Achenbach, Univ. of Saskatchewan (Canada)
M. Börner, Institut für Mikrostrukturtechnik (IMT) (Germany)
H. Márquez, Ctr. de Investigación Científica y de Educación Superior de Ensenada B.C. (Mexico)


Published in SPIE Proceedings Vol. 9556:
Nanoengineering: Fabrication, Properties, Optics, and Devices XII
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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