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Proceedings Paper

Carrier-injection studies in GaN-based light-emitting-diodes
Author(s): Dinh Chuong Nguyen; David Vaufrey; Mathieu Leroux
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Paper Abstract

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED’s built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED’s behaviors.

Paper Details

Date Published: 8 September 2015
PDF: 10 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710J (8 September 2015); doi: 10.1117/12.2187078
Show Author Affiliations
Dinh Chuong Nguyen, Univ. Grenoble Alpes (France)
David Vaufrey, Univ. Grenoble Alpes (France)
Mathieu Leroux, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)


Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

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