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Proceedings Paper

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures
Author(s): Stefan Sax; Sebastian Nau; Karl Popovic; Alexander Bluemel; Andreas Klug; Emil J. W. List-Kratochvil
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Paper Abstract

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size.

Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity’s the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

Paper Details

Date Published: 17 September 2015
PDF: 10 pages
Proc. SPIE 9569, Printed Memory and Circuits, 95690M (17 September 2015); doi: 10.1117/12.2187014
Show Author Affiliations
Stefan Sax, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Sebastian Nau, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Karl Popovic, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Alexander Bluemel, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Andreas Klug, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Emil J. W. List-Kratochvil, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Graz Univ. of Technology (Austria)


Published in SPIE Proceedings Vol. 9569:
Printed Memory and Circuits
Emil J. W. List Kratochvil, Editor(s)

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