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Proceedings Paper

Ambipolar organic permeable base transistors
Author(s): Felix Kaschura; Axel Fischer; Daniel Kasemann; Karl Leo
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Paper Abstract

Organic transistors with vertical current transport like the Permeable Base Transistor (PBT) show a high performance while allowing for an easy fabrication on the device level. For a simple implementation on a circuit level, ambipolar transistors, providing the functionality of n-type as well as p-type devices, have a benefit for complementary logic. This requires transistors where electrons and holes are present. Here, we investigate a potential concept of bipolar current transport in PBTs. In our device structure, we use the base electrode to control the current flow, but also to investigate the charge carrier transport. The ambipolar organic PBT achieves a charge carrier transmission of 88% and a current density above 200mA=cm2. Additionally, we show that recombination near the base is required in an ambipolar PBT for a good performance.

Paper Details

Date Published: 31 August 2015
PDF: 7 pages
Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 956805 (31 August 2015); doi: 10.1117/12.2186994
Show Author Affiliations
Felix Kaschura, TU Dresden (Germany)
Axel Fischer, TU Dresden (Germany)
Daniel Kasemann, TU Dresden (Germany)
Karl Leo, TU Dresden (Germany)

Published in SPIE Proceedings Vol. 9568:
Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
Ioannis Kymissis; Iain McCulloch; Ruth Shinar; Oana D. Jurchescu; Luisa Torsi, Editor(s)

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