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Proceedings Paper

Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment
Author(s): Vlasta Sasinková; Jozef Huran; Angela Kleinová; Pavol Boháček; Juraj Arbet; Mária Sekáčova
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Paper Abstract

Amorphous silicon carbide films were deposited by plasma enhanced chemical vapor deposition (PECVD) technology using SiH4, CH4, H2 and NH3 gas as precursors. The concentration of elements in the films was determined by RBS and ERD analytical method. Chemical compositions were analyzed by FT-IR spectroscopy. Raman spectroscopy study of the SiC films were performed by using a Raman microscope. Irradiation of samples with neutrons to fluencies A(7.9x1014 cm-2), B(5x1015 cm-2) and C(3.4x1016 cm-2) was performed at room temperature. Raman spectroscopy results of SiC films showed decreasing of Raman band feature intensity after neutron irradiation and slightly decreased with increased neutron fluencies. Raman spectra differences between types of films before and after neutron irradiation are discussed. The electrical properties of SiC films were determined by the I-V measurement at 295 K. The measured currents were greater (about two order) after irradiation than the current before irradiation for all samples and rose up with neutron fluencies.

Paper Details

Date Published: 23 September 2015
PDF: 7 pages
Proc. SPIE 9563, Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII, 95630V (23 September 2015); doi: 10.1117/12.2186749
Show Author Affiliations
Vlasta Sasinková, Institute of Chemistry SAS (Slovakia)
Jozef Huran, Institute of Electrical Engineering SAS (Slovakia)
Angela Kleinová, Polymer Institute SAS (Slovakia)
Pavol Boháček, Institute of Electrical Engineering SAS (Slovakia)
Juraj Arbet, Institute of Electrical Engineering SAS (Slovakia)
Mária Sekáčova, Institute of Electrical Engineering SAS (Slovakia)

Published in SPIE Proceedings Vol. 9563:
Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII
Neelkanth G. Dhere; John H. Wohlgemuth; Rebecca Jones-Albertus, Editor(s)

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