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Proceedings Paper

High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector
Author(s): Chong Li; ChunLai Xue; Zhi Liu; Hui Cong; Xia Guo; Buwen Cheng
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Paper Abstract

A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40μmdiameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40μm-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.

Paper Details

Date Published: 28 August 2015
PDF: 6 pages
Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 960908 (28 August 2015); doi: 10.1117/12.2186742
Show Author Affiliations
Chong Li, Beijing Univ. of Technology (China)
Institute of Semiconductors (China)
ChunLai Xue, Institute of Semiconductors (China)
Zhi Liu, Institute of Semiconductors (China)
Hui Cong, Institute of Semiconductors (China)
Xia Guo, Beijing Univ. of Technology (China)
Buwen Cheng, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 9609:
Infrared Sensors, Devices, and Applications V
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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