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Proceedings Paper

Capturing the effect of long low-temperature anneals on the sub-bandgap defect structure of CZTSSe
Author(s): Talia Gershon; Doug Bishop; Brian McCandless; Wei Wang; Richard Haight
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Paper Abstract

In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films are subjected to long, low-temperature annealing treatments which have been suggested to bring the material through an “order/disorder” transition. The samples are then characterized by intensity-dependence photoluminescence measurements at low temperature. We observe that annealing the films at 150°C for 1 day causes a shift in the sub-band gap (Eg) states towards higher photon energies. One week of annealing appears to result in a similar electronic structure as 1 day of annealing, and therefore the measurements performed after 1 day roughly represents the equilibrium (kinetically-limited) defect structure for this temperature. Importantly, all samples measured in this study display strong recombination through deep states up to ~330 meV below the band gap. Therefore, while some improvements are observed to occur after long low-temperature annealing, we find that this approach does not fully remedy the band tailing states found to limit the Voc in CZTSSe thin film photovoltaics.

Paper Details

Date Published: 16 September 2015
PDF: 6 pages
Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 955209 (16 September 2015); doi: 10.1117/12.2186658
Show Author Affiliations
Talia Gershon, IBM Thomas J. Watson Research Ctr. (United States)
Doug Bishop, Univ. of Delaware (United States)
Brian McCandless, Univ. of Delaware (United States)
Wei Wang, IBM Albany Nanotech Research Ctr. (United States)
Richard Haight, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 9552:
Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII
Manijeh Razeghi; Maziar Ghazinejad; Can Bayram; Jae Su Yu; Young Hee Lee, Editor(s)

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