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Proceedings Paper

Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes
Author(s): Benjamin F. Bory; Paulo Rocha; Henrique L. Gomes; Dago M. de Leeuw; Stefan C. J. Meskers
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Paper Abstract

Diodes containing a layer of aluminum oxide combined with a layer of π-conjugated polymer show nonvolatile memory effects after they have been electroformed. Electroforming is induced by application high bias voltage close to the limit for dielectric breakdown and can be performed reliably and with high yield on organic-inorganic hybrid diodes with controlled oxide thickness. Here we investigate the initial stage of the electroforming process and show through temperature dependent current-voltage characterization that electrons are trapped in deep traps at the interface between π-conjugated polyspirofluorene polymer and the aluminum oxide.

Paper Details

Date Published: 17 September 2015
PDF: 8 pages
Proc. SPIE 9569, Printed Memory and Circuits, 956904 (17 September 2015); doi: 10.1117/12.2186577
Show Author Affiliations
Benjamin F. Bory, Eindhoven Univ. of Technology (Netherlands)
Paulo Rocha, Instituto de Telecomunicações (Portugal)
Univ. do Algarve (Portugal)
Max-Planck Institute for Polymer Research (Germany)
Henrique L. Gomes, Instituto de Telecomunicações (Portugal)
Univ. do Algarve (Portugal)
Dago M. de Leeuw, Max-Planck Institute for Polymer Research (Germany)
King Abdulaziz Univ. (Saudi Arabia)
Stefan C. J. Meskers, Eindhoven Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 9569:
Printed Memory and Circuits
Emil J. W. List Kratochvil, Editor(s)

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