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Proceedings Paper

Thermal destruction mechanisms of PIN-junction optoelectronic diode by laser
Author(s): Xiao-Wu Ni; Jian Lu
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Paper Abstract

The interaction process of a high-power laser and a PIN-junction optoelectronic diode has been studied theoretically and experimentally. It has been put forward that the thermal effect of laser beams and the eroding and washing effect while the laser plasmas expand out, results in the silicon photodiode to be damaged. The thermal distribution, the expression of the maximum temperature, have been obtained for the first time when a Q-switched Nd:YAG laser irradiated upon the PIN junction optoelectronic diode.

Paper Details

Date Published: 8 September 1995
PDF: 7 pages
Proc. SPIE 2551, Photoelectronic Detectors, Cameras, and Systems, (8 September 1995); doi: 10.1117/12.218643
Show Author Affiliations
Xiao-Wu Ni, Nanjing Univ. of Science & Technology (China)
Jian Lu, Nanjing Univ. of Science & Technology (China)

Published in SPIE Proceedings Vol. 2551:
Photoelectronic Detectors, Cameras, and Systems
C. Bruce Johnson; Ervin J. Fenyves, Editor(s)

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