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Proceedings Paper

Design and fabrication technology of thinned backside-excited CCD imagers and the family of the intensified electron-bombarded CCD image tubes
Author(s): Ilia Nikolaevic Dalinenko; Alexandre Victorovic Malyarov; Grigory I. Vishnevsky; Michail G. Vydrevitch; Vladimir G. Kossov; Leonid Yu. Lazovsky; Sergei Vasilievic Golovkin
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Paper Abstract

This paper sums up the results of more than 10 years of experience in design and manufacturing of thinned back-side illuminated CCDs of different types. Based upon the EB- CCDs created, the family of intensified electron-bombardment CCD image tubes has been designed, fabricated, and tested. This family includes: the single-stage Gen I EB-CCD devices with the 532*580 and 780*580 pixels CCDs; the 'hybrid' (the EB-CCD tube plus Gen I image intensifier) devices; and the EB-CCD tubes with the 40 mm photocathode and image demagnification factor 3 to 1. The results of the tests of these devices are presented and discussed. Besides this, the near future projects concerning EB-CCD tubes with the 80 mm photocathode and with image demagnification factor 5 to 1, and EB-CCD tubes with solar blind photocathods for the UV and EUV applications are briefly described.

Paper Details

Date Published: 8 September 1995
PDF: 9 pages
Proc. SPIE 2551, Photoelectronic Detectors, Cameras, and Systems, (8 September 1995); doi: 10.1117/12.218631
Show Author Affiliations
Ilia Nikolaevic Dalinenko, Central Research Institute Electron (Russia)
Alexandre Victorovic Malyarov, Central Research Institute Electron (Russia)
Grigory I. Vishnevsky, Central Research Institute Electron (Russia)
Michail G. Vydrevitch, Central Research Institute Electron (Russia)
Vladimir G. Kossov, Central Research Institute Electron (Russia)
Leonid Yu. Lazovsky, Central Research Institute Electron (Russia)
Sergei Vasilievic Golovkin, Institute for High Energy Physics (Russia)


Published in SPIE Proceedings Vol. 2551:
Photoelectronic Detectors, Cameras, and Systems
C. Bruce Johnson; Ervin J. Fenyves, Editor(s)

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