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Proceedings Paper

Development of extended red (1.0- to 1.3-um) image intensifiers
Author(s): Joseph P. Estrera; Timothy W. Sinor; Keith T. Passmore; M. K. Rector
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Paper Abstract

We present the development of extended near infrared based image intensifiers with InGaAs semiconductor and multi-alkali based photocathodes having 1.0-1.3 micrometers and 1.0-1.1 micrometers spectral sensitivities, respectively. For the InGaAs based image intensifiers, we study their material characteristics using transmission, photoluminescence, micro-Raman, and scanning Auger spectroscopies. Direct spectral comparison of the InGaAs image intensifiers are made to standard Generation II and III image intensifiers. Then we study the sealed NEA InGaAs image tube performance parameters such as spectral sensitivity, whitelight photoresponse, equivalent background illumination, signal-to-noise, modulation transfer function, and optical system-image intensifier field performance data. For the multi-alkali based image intensifiers, we present a direct spectral comparison of it to our NEA InGaAs and standard super Gen II image tubes. Finally, we examine the advancement of our near infrared devices into the 1.5-2.0 micrometers spectral regime.

Paper Details

Date Published: 8 September 1995
PDF: 10 pages
Proc. SPIE 2551, Photoelectronic Detectors, Cameras, and Systems, (8 September 1995); doi: 10.1117/12.218625
Show Author Affiliations
Joseph P. Estrera, Litton Electron Devices Division/Garland (United States)
Timothy W. Sinor, Litton Electron Devices Division/Garland (United States)
Keith T. Passmore, Litton Electron Devices Division/Garland (United States)
M. K. Rector, Litton Electron Devices Division/Garland (United States)

Published in SPIE Proceedings Vol. 2551:
Photoelectronic Detectors, Cameras, and Systems
C. Bruce Johnson; Ervin J. Fenyves, Editor(s)

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