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Proceedings Paper

Influence of thickness and annealing temperature on the structure properties of random mask deposited by magnetron sputtering
Author(s): Jiaoling Zhao; Hu Wang; Hongji Qi; Weili Zhang; Yingjie Chai; Jialu Guo; Hongbo He
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Paper Abstract

The structure properties of random mask of antireflective structure prepared by the thermal dewetting process are investigated. As a low-cost and large-scale technique, the mask obtained in our work has a great prospect in the field of solar cell and high power laser system. Ultrathin films of amorphous Ag are deposited on the fused silica by magnetron sputtering. By fast thermal annealing the structures in Ag film are agglomerated on the substrate and form mask. The influence of different thickness and annealing temperature on the structure properties of random mask are studied. The surface morphologies are characterized by scanning electronic microscopy. The suitable conditions to obtain excellent quality Ag nanomasks with the pebble particles are achieved.

Paper Details

Date Published: 22 July 2015
PDF: 7 pages
Proc. SPIE 9532, Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers, 953224 (22 July 2015); doi: 10.1117/12.2186014
Show Author Affiliations
Jiaoling Zhao, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Hu Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Hongji Qi, Shanghai Institute of Optics and Fine Mechanics (China)
Weili Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Yingjie Chai, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Jialu Guo, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Hongbo He, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 9532:
Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers
Jianda Shao; Takahisa Jitsuno; Wolfgang Rudolph; Meiping Zhu, Editor(s)

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