Share Email Print
cover

Proceedings Paper

Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor
Author(s): GuoDong Cui; Mingying Ma; Fan Wang; Gang Sun; Yanping Lan; Wen Xu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

To enhance the performance of the Insulated Gate Bipolar Transistor (IGBT), sub-microsecond laser annealing (LA) is propitious to achieve maximal dopant activation with minimal diffusion. In this work, two different lasers are used as annealing resource: a continuous 808 nm laser with larger spot is applied to preheat the wafer and another sub-microsecond pulsed 527 nm laser is responsible to activate the dopant. To optimize the system’s performance, a physical model is presented to predict the thermal effect of two laser fields interacting on wafer. Using the Finite-Element method (FEM), we numerically investigate the temperature field induced by lasers in detail. The process window corresponding to the lasers is also acquired which can satisfy the requirements of the IGBT’s annealing.

Paper Details

Date Published: 14 July 2015
PDF: 14 pages
Proc. SPIE 9532, Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers, 953223 (14 July 2015); doi: 10.1117/12.2186011
Show Author Affiliations
GuoDong Cui, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Mingying Ma, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Fan Wang, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Gang Sun, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Yanping Lan, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Wen Xu, Shanghai Micro Electronics Equipment Co., Ltd. (China)


Published in SPIE Proceedings Vol. 9532:
Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers
Jianda Shao; Takahisa Jitsuno; Wolfgang Rudolph; Meiping Zhu, Editor(s)

© SPIE. Terms of Use
Back to Top