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Proceedings Paper

High performance GaN based blue flip-chip light-emitting diodes
Author(s): G.M. Jin; I.G. Choi; J.C. Park; S.K. Jeon; E.H. Park
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Paper Abstract

In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.

Paper Details

Date Published: 8 September 2015
PDF: 4 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710S (8 September 2015); doi: 10.1117/12.2185915
Show Author Affiliations
G.M. Jin, Semicon Light Co., Ltd. (Korea, Republic of)
I.G. Choi, Semicon Light Co., Ltd. (Korea, Republic of)
J.C. Park, Semicon Light Co., Ltd. (Korea, Republic of)
S.K. Jeon, Semicon Light Co., Ltd. (Korea, Republic of)
E.H. Park, Semicon Light Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

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