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Proceedings Paper

High performance near-ultraviolet flip-chip light-emitting diodes with distributed Bragg reflector
Author(s): Il-Gyun Choi; Geun-Mo Jin; Jun-Cheon Park; Soo-Kun Jeon; Eun-Hyun Park
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Paper Abstract

We have fabricated the near-ultraviolet (NUV) flip-chip (FC) light-emitting diodes (LEDs) with the high external quantum efficiency (EQE) using distributed Bragg reflectors (DBRs) and compared with conventional FC-LED using silver (Ag) reflector. Reflectance of Ag is very high (90 ~ 95 %) at visible spectrum region, but sharply decrease at NUV region. Therefore we used DBR composed of two different materials which have high-index contrast, such as TiO2 and SiO2. However, to achieve high-performance NUV flip-chip LEDs, we used Ta2O5 instead of TiO2 that absorbs lights of NUV region. Thus, we have designed a DBR composed of twenty pairs of Ta2O5 and SiO2 using optical coating design software. The DBR designed by our group achieves a reflectance of ~99 % in the NUV region (350 ~ 500 nm), which is much better than Ag reflector. Optical power is higher than the Ag-LED up to 22 % @ 390 nm.

Paper Details

Date Published: 8 September 2015
PDF: 5 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710R (8 September 2015); doi: 10.1117/12.2185781
Show Author Affiliations
Il-Gyun Choi, Semicon Light Co., Ltd. (Korea, Republic of)
Geun-Mo Jin, Semicon Light Co., Ltd. (Korea, Republic of)
Jun-Cheon Park, Semicon Light Co., Ltd. (Korea, Republic of)
Soo-Kun Jeon, Semicon Light Co., Ltd. (Korea, Republic of)
Eun-Hyun Park, Semicon Light Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

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