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Proceedings Paper

Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
Author(s): Ronggang Cai; Hailu G. Kassa; Alessio Marrani; Albert J. J. M. van Breemen; Gerwin H. Gelinck; Bernard Nysten; Zhijun Hu; Alain M. Jonas
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Paper Abstract

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor.

Paper Details

Date Published: 17 September 2015
PDF: 11 pages
Proc. SPIE 9569, Printed Memory and Circuits, 95690G (17 September 2015); doi: 10.1117/12.2185677
Show Author Affiliations
Ronggang Cai, Univ. Catholique de Louvain (Belgium)
Hailu G. Kassa, Univ. Catholique de Louvain (Belgium)
Alessio Marrani, Solvay Specialty Polymers Italy S.P.A. (Italy)
Albert J. J. M. van Breemen, Holst Ctr. (Netherlands)
TNO (Netherlands)
Gerwin H. Gelinck, Holst Ctr. (Netherlands)
TNO (Netherlands)
Bernard Nysten, Univ. Catholique de Louvain (Belgium)
Zhijun Hu, Soochow Univ. (China)
Alain M. Jonas, Univ. Catholique de Louvain (Belgium)

Published in SPIE Proceedings Vol. 9569:
Printed Memory and Circuits
Emil J. W. List Kratochvil, Editor(s)

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