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Proceedings Paper

Radiative dark current in optically thin III-V photovoltaic devices
Author(s): Roger E. Welser; Ashok K. Sood; Sudersena Rao Tatavarti; Andree Wibowo; David M. Wilt; Alex Howard
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Paper Abstract

High-voltage InGaAs quantum well solar cells have been demonstrated in a thin-film format, utilizing structures that employ advanced band gap engineering to suppress non-radiative recombination and expose the limiting radiative component of the diode current. In particular, multiple InGaAs quantum well structures fabricated via epitaxial lift-off exhibit one-sun open circuit voltages as high as 1.05 V. The dark diode characteristics of these high-voltage III-V photovoltaic devices are compared to the radiative current calculated from the measured external quantum efficiency using a generalized detailed balance model specifically adapted for optically-thin absorber structures. The fitted n=1 component of the diode current is found to match the calculated radiative dark current when assuming negligible photon recycling, suggesting this thin-film multiple quantum well structure is operating close to the radiative limit.

Paper Details

Date Published: 16 April 2015
PDF: 9 pages
Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580Q (16 April 2015); doi: 10.1117/12.2185571
Show Author Affiliations
Roger E. Welser, Magnolia Solar, Inc. (United States)
Ashok K. Sood, Magnolia Solar, Inc. (United States)
Sudersena Rao Tatavarti, MicroLink Devices, Inc. (United States)
Andree Wibowo, MicroLink Devices, Inc. (United States)
David M. Wilt, Air Force Research Lab. (United States)
Alex Howard, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 9358:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Alexandre Freundlich; Jean-François Guillemoles; Masakazu Sugiyama, Editor(s)

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