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Proceedings Paper

Electron beam evaporation induced discoloration of reflective film on InGaN/sapphire in III-V LED TFFC device manufacturing
Author(s): Sivanantham Neelakandan; Chun Hoo Chai; Kam Hoe Chaw; Veera Sae Tae
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Paper Abstract

In this paper, the discoloration of indium-gallium-nitride (InGaN) on sapphire (Al2O3) substrate after processing in electron beam vacuum evaporation for mirror metal evaporation has been investigated. Discoloration can be detrimental to light output of a light emitting diode (LED) as the light extraction through discolored gallium nitride (GaN) epitaxy is impacted. The investigation shows that the discoloration caused by an interaction between few factors such as the level of organic contamination present at the edges of the substrate, contact area with holding dome of the evaporator, thickness of the film deposited and radiation intensity from the evaporation source. Reflection Spectroscopy was used to quantify reflectivity of discolored mirror metal while X-ray fluorescence spectrometry (XRF) was used to measure film thickness and time of flight – secondary ion mass spectrometry (TOF-SIMS) was employed to measure organic contamination amounts. A residual gas analyzing (RGA) technique was established to detect potential discoloration to eliminate disruptions to manufacturing.

Paper Details

Date Published: 17 July 2015
PDF: 8 pages
Proc. SPIE 9524, International Conference on Optical and Photonic Engineering (icOPEN 2015), 952406 (17 July 2015); doi: 10.1117/12.2185002
Show Author Affiliations
Sivanantham Neelakandan, Philips Lumileds Singapore Pte. Ltd. (Singapore)
Chun Hoo Chai, Philips Lumileds Singapore Pte. Ltd. (Singapore)
Kam Hoe Chaw, Philips Lumileds Singapore Pte. Ltd. (Singapore)
Veera Sae Tae, Philips Lumileds Singapore Pte. Ltd. (Singapore)


Published in SPIE Proceedings Vol. 9524:
International Conference on Optical and Photonic Engineering (icOPEN 2015)
Anand K. Asundi; Yu Fu, Editor(s)

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