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Proceedings Paper

Interface trap density effect on efficiency of Fullerene organic Schottky diode
Author(s): Mebarka Daoudi; Nesrine Mendil; Zakarya Berkai; Abderrahmane Belghachi
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Paper Abstract

In order to optimize the device performance it is very important to have knowledge about intrinsic properties, particularly the charge transport and charge injection properties. One of the basic methods to investigate the charge transport in interface metal/organic semiconductors is to determine the dark current density voltage characteristic (J-V), where the important effects which describe that transport mechanism are the space charge, trapping and Schottky effects [1]. The interface trap density effect on dark J-V characteristics of fullerene (C60) Schottky diode is investigated here for different electrodes LiF/Al, Al, Ag and Pt. The C60/LiF/Al interface has been found to exhibit the ohmic interface type junction in C60 electronic only diode. We have a good agreement with the experimental results.

Paper Details

Date Published: 18 September 2015
PDF: 5 pages
Proc. SPIE 9567, Organic Photovoltaics XVI, 95671D (18 September 2015); doi: 10.1117/12.2184291
Show Author Affiliations
Mebarka Daoudi, Univ. Tahri Mohammed Béchar (Algeria)
Nesrine Mendil, Univ. Tahri Mohammed Béchar (Algeria)
Zakarya Berkai, Univ. Tahri Mohammed Béchar (Algeria)
Abderrahmane Belghachi, Univ. Tahri Mohammed Béchar (Algeria)


Published in SPIE Proceedings Vol. 9567:
Organic Photovoltaics XVI
Zakya H. Kafafi; Paul A. Lane; Ifor D. W. Samuel, Editor(s)

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