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Proceedings Paper

Terahertz oscillators and receivers using electron devices for high-capacity wireless communication
Author(s): Safumi Suzuki; Masahiro Asada
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Paper Abstract

Recent progress in room-temperature resonant-tunneling-diode (RTD) terahertz (THz) oscillators and high-electron-mobility- transistor (HEMT) THz receivers is reported in this paper. In this study, oscillations up to 1.86 THz were obtained using an optimized antenna and RTD. Using a two-element oscillator array, high output power of 0.6 mW at 620 GHz was obtained. THz communication up to 3 Gbps was demonstrated. A structure for high-speed direct modulation was fabricated, and the intensity modulation up to 30 GHz was achieved. A novel oscillator structure was proposed and fabricated for extraction of output power without using a Si lens. A short-gate InGaAs HEMT detector integrated with a broadband bow-tie antenna was fabricated, and a high current sensitivity of ~5 A/W was obtained at 280 GHz.

Paper Details

Date Published: 13 May 2015
PDF: 7 pages
Proc. SPIE 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense, 948309 (13 May 2015); doi: 10.1117/12.2183066
Show Author Affiliations
Safumi Suzuki, Tokyo Institute of Technology (Japan)
Masahiro Asada, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9483:
Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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