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Proceedings Paper

Surface morphology of LPE-growth GaSb quantum dots
Author(s): Yang Wang; Shuhong Hu; Yingfei Lv; Ning Dai
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Paper Abstract

The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.

Paper Details

Date Published: 13 April 2015
PDF: 6 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95222X (13 April 2015); doi: 10.1117/12.2182638
Show Author Affiliations
Yang Wang, Shanghai Institute of Technical Physics (China)
Shuhong Hu, Shanghai Institute of Technical Physics (China)
Yingfei Lv, Shanghai Institute of Technical Physics (China)
Ning Dai, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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