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Proceedings Paper

Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs
Author(s): Akihiro Kawahara; Akira Ajisawa; Keiji Miyamoto; Masayuki Kanzaki; Tokuhito Sasaki; Mitsuko Tomono; Naoki Oda; Takeshi Shima; Yasunobu Sekihara
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Paper Abstract

A hybrid HgCdTe 256 by 256 FPA for LWIR detection was fabricated and an infrared image was demonstrated. MCT epilayers were grown on GaAs substrates by MBE and annealed to p- type. The n+ on p photodiodes were formed by boron ion implantation. The mean value of zero bias differential resistance for the diode array was measured to be 8.0 M(Omega) with a cutoff wavelength of 9.5 micrometer. The effective quantum efficiency was estimated to be 0.55, and the optical cross talk was estimated to be 8.2%. A multiline parallel integration readout circuit designed especially for this 256 by 256 LWIR FPA, had 8.3 X 107 electron capacity, a 190 microsecond integration time, and a single output. This work shows that the MBE growth method on GaAs substrates, pn junction formation process, the MLPI circuit design, and the hybridization technique are useful technologies.

Paper Details

Date Published: 8 September 1995
PDF: 10 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218241
Show Author Affiliations
Akihiro Kawahara, NEC Corp. (Japan)
Akira Ajisawa, NEC Corp. (Japan)
Keiji Miyamoto, NEC Corp. (Japan)
Masayuki Kanzaki, NEC Corp. (Japan)
Tokuhito Sasaki, NEC Corp. (Japan)
Mitsuko Tomono, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)
Takeshi Shima, NEC Corp. (Japan)
Yasunobu Sekihara, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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