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Proceedings Paper

Optimization of high average power FEL beam for EUV lithography
Author(s): Akira Endo
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) is entering into high volume manufacturing (HVM) stage, with high average power (250W) EUV source from laser produced plasma at 13.5nm. Semiconductor industry road map indicates a scaling of the source technology more than 1kW average power by high repetition rate FEL. This paper discusses on the lowest risk approach to construct a prototype based on superconducting linac and normal conducting undulator, to demonstrate a high average power 13.5nm FEL equipped with optimized optical components and solid state lasers, to study FEL application in EUV lithography.

Paper Details

Date Published: 12 May 2015
PDF: 8 pages
Proc. SPIE 9512, Advances in X-ray Free-Electron Lasers Instrumentation III, 95121O (12 May 2015); doi: 10.1117/12.2182239
Show Author Affiliations
Akira Endo, Institute of Physics of the ASCR, v.v.i. (Czech Republic)

Published in SPIE Proceedings Vol. 9512:
Advances in X-ray Free-Electron Lasers Instrumentation III
Sandra G. Biedron, Editor(s)

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