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Recent progress in the doping of MBE HgCdTe
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Paper Abstract

We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 1015 cm-3. Electron mobilities in the range of (2 - 3) X 105 cm2/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 1015 cm-3 doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

Paper Details

Date Published: 1 September 1995
PDF: 14 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218203
Show Author Affiliations
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Priyalal S. Wijewarnasuriya, Univ. of Illinois/Chicago (United States)
Jean-Pierre Faurie, Univ. of Illinois/Chicago (United States)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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