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Proceedings Paper

Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy
Author(s): Christopher J. Summers; Ashesh Parikh; Tuyen K. Tran; Jens Wolfgang Tomm; P. Schafer; Nancy C. Giles; S. D. Pearson; Rudolph G. Benz; Brent K. Wagner; Robert N. Bicknell-Tassius
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Paper Abstract

The electrical and optical properties of iodine doped n-type HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy using ethyliodide are reviewed. The rationale for the use of iodine rather than indium as the dopant species and the incorporation kinetics of iodine at the growth surface are discussed. The electrical and optical properties of iodine- doped CdTe and HgCdTe (x equals 0.24) are presented for carrier concentrations between 1015 and 1018 cm-3, as determined by Hall effect measurements and low- and room-temperature photoluminescence spectroscopy. These samples show strong room temperature excitonic effects due to free exciton and band to band recombination as determined by photoluminescence excitation spectroscopy. The electrical and optical properties of iodine-doped HgCdTe-CdTe superlattices also are discussed based on magnetoluminescence measurements in tilted magnetic fields of up to 7 Tesla in Voigt and Faraday geometry.

Paper Details

Date Published: 1 September 1995
PDF: 14 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218202
Show Author Affiliations
Christopher J. Summers, Georgia Tech Research Institute (United States)
Ashesh Parikh, Georgia Tech Research Institute (United States)
Tuyen K. Tran, Georgia Tech Research Institute (United States)
Jens Wolfgang Tomm, Humboldt Univ. Berlin (Germany)
P. Schafer, Humboldt Univ. Berlin (Germany)
Nancy C. Giles, West Virginia Univ. (United States)
S. D. Pearson, Georgia Tech Research Institute (United States)
Rudolph G. Benz, Georgia Tech Research Institute (United States)
Brent K. Wagner, Georgia Tech Research Institute (United States)
Robert N. Bicknell-Tassius, Georgia Tech Research Institute (United States)


Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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