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Proceedings Paper

Growth and properties of semiconductor bolometers for infrared detection
Author(s): Mark H. Unewisse; Brian I. Craig; Rodney J. Watson; Olaf Reinhold; Kevin Charles Liddiard
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Paper Abstract

This paper describes the growth and properties of micro-machined semiconductor microbolometers. These thermally isolated structures are employed in uncooled infrared detectors developed at the Defence Science and Technology Organisation (DSTO). Recent research is focused towards developing high performance bolometers from the amorphous and more recently the microcrystalline phases of the SiGe:H material system. Particular attention is given to materials and material growth techniques that maximize the responsivity and minimize the electronic excess noise. The basic design, materials science, and performance of these bolometers for detecting infrared radiation are described in this paper.

Paper Details

Date Published: 1 September 1995
PDF: 12 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218201
Show Author Affiliations
Mark H. Unewisse, Defence Science and Technology Organisation (Australia)
Brian I. Craig, Defence Science and Technology Organisation (Australia)
Rodney J. Watson, Defence Science and Technology Organisation (Australia)
Olaf Reinhold, Defence Science and Technology Organisation (Australia)
Kevin Charles Liddiard, Defence Science and Technology Organisation (Australia)


Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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