Share Email Print
cover

Proceedings Paper

Anisotropic study of thermal stresses of (110) Silicon induced by millisecond laser
Author(s): Zewen Li; Jie Zhou; Hongchao Zhang; Zhonghua Shen; Jian Lu; Xiaowu Ni
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A 3D numerical model has been built to investigate anisotropic thermal stresses of (110) silicon induced by millisecond laser. The 12 slip systems resolved shear stress field of the silicon was obtained by using the FEM. The excess resolved shear stress field is identified. comparing to the experiment of the millisecond irradiating (110) PIN photodiode, we conclude that the thermal slips are introduced duo to the anisotropic thermal stresses of silicon surpassed the critical yield stress and brittle cracks are introduced due to the initiation points offered by the thermal slips which will reduce the fracture strength greatly. These thermal slips and brittle cracks increase the dark current of the photodiode greatly.

Paper Details

Date Published: 4 May 2015
PDF: 8 pages
Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 954307 (4 May 2015); doi: 10.1117/12.2181970
Show Author Affiliations
Zewen Li, Nanjing Univ. of Science and Technology (China)
Jie Zhou, Nanjing Univ. of Science and Technology (China)
Hongchao Zhang, Nanjing Univ. of Science and Technology (China)
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9543:
Third International Symposium on Laser Interaction with Matter
Yury M. Andreev; Zunqi Lin; Xiaowu Ni; Xisheng Ye, Editor(s)

© SPIE. Terms of Use
Back to Top