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Proceedings Paper

Influence of doping on the crystallization kinetics of Ge-Sb-Te thin films for phase-change memory application
Author(s): Alexey A. Sherchenkov; Sergey A. Kozyukhin; Alexey V. Babich; Yuri I. Shtern; Rostislav E. Mironov
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Paper Abstract

Crystallization kinetics in thin films of Ge2Sb2Te5 doped by Bi and Ti was studied. It has been shown that introduction of these impurities may have an impact on the kinetic parameters of the crystallization process. The possible recording and storage times of devices based on investigated materials were evaluated. It was shown that GST225 + 0,5 wt. % Bi has the best characteristics among the studied materials. Estimations showed that this composition can provide switching time of the phase-change memory cells less than 1 ns and it is extremely stable at room temperatures which is important for the reliable storage of information in memory cells.

Paper Details

Date Published: 18 December 2014
PDF: 10 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944005 (18 December 2014); doi: 10.1117/12.2181906
Show Author Affiliations
Alexey A. Sherchenkov, National Research Univ. of Electronic Technology (Russian Federation)
Sergey A. Kozyukhin, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
Alexey V. Babich, National Research Univ. of Electronic Technology (Russian Federation)
Yuri I. Shtern, National Research Univ. of Electronic Technology (Russian Federation)
Rostislav E. Mironov, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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