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Proceedings Paper

New process for the controlled formation of ultrathin PtSi films for infrared detector applications
Author(s): Alfonso Torres; Sabine Kolodinski; Ricardo A. Donaton; Karen Maex; P. Roussel; Hugo Bender
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Paper Abstract

A simple method for controlling the thickness of PtSi for infrared detectors is presented. Thicknesses of PtSi in the range of 2 - 5 nm can be controlled via the reaction kinetics of the silicidation. Compared to conventional furnace anneal, the thickness and homogeneity of the resulting PtSi-layers are independent of the deposited Pt-thickness. Superior uniformity, lower continuous film thicknesses of the PtSi-layers, and smoother PtSi/Si-interfaces than possible by conventional furnace anneal are achieved by applying this technique.

Paper Details

Date Published: 1 September 1995
PDF: 6 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218187
Show Author Affiliations
Alfonso Torres, IMEC (Belgium)
Sabine Kolodinski, IMEC (Belgium)
Ricardo A. Donaton, IMEC (Belgium)
Karen Maex, IMEC (Belgium)
P. Roussel, IMEC (Belgium)
Hugo Bender, IMEC (Belgium)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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