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Proceedings Paper

Advances in infrared antimonide technology
Author(s): William F. Micklethwaite
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Paper Abstract

Recently, significant advances have been made in both the application and production of the narrow gap, antimonide compound semiconductors. Growth of InSb and GaSb at 3 and even 4 inch diameters has been achieved with good homogeneity and acceptable defect density. Advances are being made to achieve a wafer surface finish suitable for direct epitaxy. New binary applications for large-area focalplane detector arrays, high resistivity substrates and thermophotovoltaics, and for the ternary (Ga,In)Sb are discussed.

Paper Details

Date Published: 1 September 1995
PDF: 8 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218185
Show Author Affiliations
William F. Micklethwaite, Firebird Semiconductors Ltd. (Canada)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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