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Proceedings Paper

Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array
Author(s): Shmuel I. Borenstain; Uriel Arad; S. Afanasyev; I. Luybina; A. Segal
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Paper Abstract

A 128 multiplied by 128 GaAs/GaAlAs quantum well infrared (QWIP) sensing array with a 2- D grating and indium bumps has been fabricated. The array has been characterized prior to flip chip bonding, both electrically and optically. The obtained responsivity and dark current of selected pixels in the array indicate high material uniformity. Design and processing issues are discussed.

Paper Details

Date Published: 1 September 1995
PDF: 8 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218184
Show Author Affiliations
Shmuel I. Borenstain, Jerusalem College of Technology (Israel)
Uriel Arad, Jerusalem College of Technology (Israel)
S. Afanasyev, Jerusalem College of Technology (Israel)
I. Luybina, Jerusalem College of Technology (Israel)
A. Segal, Jerusalem College of Technology (Israel)


Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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