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Proceedings Paper

Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors
Author(s): A. G. Unil Perera
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Paper Abstract

A wavelength tunable far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer (same material) forming a homojunction is presented. The concept somewhat similar to the classic photoelectric effect was successfully demonstrated using commercial p-i-n structures. The forward biased Si, Ge, and InGaAs samples were operated at cryogenic temperatures. Threshold wavelengths ((lambda) t) from around 40 - 220 micrometers for Si and up to 240 micrometers for Ge were experimentally obtained. A model was developed to analyze the photoresponse and the dark current leading to detector figures of merit. The effect of the space charge region on the barrier height and the barrier position is investigated for a thick sample similar to the p-i-n structures.

Paper Details

Date Published: 1 September 1995
PDF: 16 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218183
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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