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Proceedings Paper

Iso-VPE growth of Hg1-xCdxTe on hybrid substrates
Author(s): Sergio Bernardi
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Paper Abstract

High quality 2 inch Hg1-xCdxTe/Sapphire structures are grown by an isothermal vapor phase epitaxy process starting from MOCVD CdTe/Sapphire hybrid substrates. HgTe growth and CdTe/HgTe solid state interdiffusion processes produce the transformation of the starting CdTe layer into a compositionally controlled Hg1-xCdxTe film on the inert base sapphire substrate grown. By using experimental growth conditions involving HgTe/CdTe interdiffusion rates higher than HgTe growth rates, in depth compositionally uniform Hg1-xCdxTe films can be obtained in a really simple one-step process. A 2-zone open tube vertical reactor improved for 2 inch wafers has been used for the present process, making it very attractive for manufacturing purposes. Morphological, optical, electrical, and structural characteristics of the iso-VPE mercury cadmium telluride on sapphire structures are reported witnessing their technological power as infrared materials.

Paper Details

Date Published: 1 September 1995
PDF: 10 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218182
Show Author Affiliations
Sergio Bernardi, Consorzio CREO (Italy)


Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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