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Proceedings Paper

CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes
Author(s): Martin Bruder; Heinrich Figgemeier; L. Palm; Johann Ziegler; Horst Maier
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Paper Abstract

An etch process was developed to determine the dislocation density on <111>B - Hg1-xCdxTe-epilayers grown by liquid phase epitaxy from a tellurium-rich solution. A correlation between the etch pit density and the Cd1-yZnyTe-substrate material properties is found. Additionally the yield of photovoltaic diode performance strongly depends on the value of these measured dislocation densities. This method acts as a pass/fail evaluation for the epilayers used in our infrared device fabrication.

Paper Details

Date Published: 1 September 1995
PDF: 6 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218181
Show Author Affiliations
Martin Bruder, AEG AG (Germany)
Heinrich Figgemeier, AEG AG (Germany)
L. Palm, AEG AG (Germany)
Johann Ziegler, AEG AG (Germany)
Horst Maier, AEG AG (Germany)


Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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