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Proceedings Paper

Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits
Author(s): D. N. Zubov; E. A. Kelm; R. A. Milovanov; G. Molodtsova
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Paper Abstract

During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contact pads might be damaged due to different factors. In present work several types of damaged contact pads and experimental investigations on its reconstructions by electrochemical deposition of silver and copper are discussed.

Paper Details

Date Published: 18 December 2014
PDF: 7 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400N (18 December 2014); doi: 10.1117/12.2181191
Show Author Affiliations
D. N. Zubov, Institute of Nanotechnology of Microelectronics (Russian Federation)
E. A. Kelm, Institute of Nanotechnology of Microelectronics (Russian Federation)
R. A. Milovanov, Institute of Nanotechnology of Microelectronics (Russian Federation)
G. Molodtsova, Institute of Nanotechnology of Microelectronics (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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