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Proceedings Paper

High-temperature single-electron transistor based on a gold nanoparticle
Author(s): S. A. Dagesyan; A. S. Stepanov; E. S. Soldatov; G. Zharik
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Paper Abstract

Molecular single-electron transistors based on small (2 - 4 nm) gold nanoparticles were fabricated using an electronbeam lithography and the electromigration method. Electrical characteristics of the obtained transistors were measured at 77 and 300 K. The characteristics show that the regime of a correlated tunneling of electrons was realized at these high for the process temperatures.

Paper Details

Date Published: 18 December 2014
PDF: 6 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400P (18 December 2014); doi: 10.1117/12.2181137
Show Author Affiliations
S. A. Dagesyan, Lomonosov Moscow State Univ. (Russian Federation)
A. S. Stepanov, Scobeltsyn Institute of Nuclear Physics (Russian Federation)
E. S. Soldatov, Lomonosov Moscow State Univ. (Russian Federation)
G. Zharik, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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