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Proceedings Paper

Carbon and fluorine co-implantation for boron diffusion suppression in extremely ultra shallow junctions
Author(s): Andrey V. Miakonkikh; Aleksander E. Rogozhin; Valeriy I. Rudakov; Konstantin V. Rudenko; Vladimir F. Lukichev
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Paper Abstract

Formation of ultra shallow p+-junctions in silicon by plasma immersion ion implantation were investigated. The effect of carbon and fluorine coimplantation were studied experimentally. Dependence of this effect from carbon concentration was studied, as well as positive role of multistep annealing for pure boron implanted samples.

Paper Details

Date Published: 18 December 2014
PDF: 5 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400L (18 December 2014); doi: 10.1117/12.2181006
Show Author Affiliations
Andrey V. Miakonkikh, Institute of Physics and Technology (Russian Federation)
Aleksander E. Rogozhin, Institute of Physics and Technology (Russian Federation)
Valeriy I. Rudakov, Institute of Physics and Technology, Yaroslavl Branch (Russian Federation)
Konstantin V. Rudenko, Institute of Physics and Technology (Russian Federation)
Vladimir F. Lukichev, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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