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Proceedings Paper

Modeling and simulation of dose effects in bipolar analog integrated circuits
Author(s): G. I. Zebrev; M. G. Drosdetsky; A. M. Galimov; A. A. Lebedev; I. A. Danilov; V. O. Turin
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Paper Abstract

It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed earlier a physical model of the Enhanced Low Dose Rate Sensitivity (ELDRS) is fully consistent with experimental temperature dependence of charge yield in thick oxides for a range of low temperatures.

Paper Details

Date Published: 18 December 2014
PDF: 8 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94401C (18 December 2014); doi: 10.1117/12.2180758
Show Author Affiliations
G. I. Zebrev, National Research Nuclear Univ. MEPHI (Russian Federation)
M. G. Drosdetsky, National Research Nuclear Univ. MEPHI (Russian Federation)
A. M. Galimov, National Research Nuclear Univ. MEPHI (Russian Federation)
A. A. Lebedev, National Research Nuclear Univ. MEPHI (Russian Federation)
I. A. Danilov, Scientific Research Institute of System Analysis (Russian Federation)
V. O. Turin, State Univ. Education-Science-Production Complex (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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