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Proceedings Paper

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation
Author(s): R. G. Useinov; G. I. Zebrev; V. V. Emelyanov; A. S. Vatuev
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Paper Abstract

Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments.

Paper Details

Date Published: 18 December 2014
PDF: 8 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94401B (18 December 2014); doi: 10.1117/12.2180756
Show Author Affiliations
R. G. Useinov, National Research Nuclear Univ. MEPHI (Russian Federation)
Research Institute of Scientific Instruments (Russian Federation)
G. I. Zebrev, National Research Nuclear Univ. MEPHI (Russian Federation)
V. V. Emelyanov, Research Institute of Scientific Instruments (Russian Federation)
A. S. Vatuev, Research Institute of Scientific Instruments (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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