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Proceedings Paper

Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications
Author(s): Maxim S. Gorbunov; Pavel S. Dolotov; Alexandra I. Shnaider; Gennady I. Zebrev; Andrey A. Antonov; Anatoly A. Lebedev
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Paper Abstract

We study the Radiation-Induced Mismatch Enhancement (RIME) in 65 nm CMOS SRAM block designed for space applications. X-ray and heavy ion irradiation increase the number of non-rewriting cells.

Paper Details

Date Published: 18 December 2014
PDF: 9 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944019 (18 December 2014); doi: 10.1117/12.2180610
Show Author Affiliations
Maxim S. Gorbunov, Scientific Research Institute of System Analysis (Russian Federation)
National Research Nuclear Univ. (Russian Federation)
Pavel S. Dolotov, Scientific Research Institute of System Analysis (Russian Federation)
Alexandra I. Shnaider, Scientific Research Institute of System Analysis (Russian Federation)
Gennady I. Zebrev, National Research Nuclear Univ. (Russian Federation)
Andrey A. Antonov, Scientific Research Institute of System Analysis (Russian Federation)
Anatoly A. Lebedev, National Research Nuclear Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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