Share Email Print

Proceedings Paper

Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution
Author(s): G. I. Zebrev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A general approach to derive the current-voltage characteristics both for field-effect and bipolar transistors has been proposed based on exact solution of current continuity equation in diffusion-drift approximation taking into account nonuniformity of electric field and charge density distributions between the contacts. This approach describes in a unified manner both linear and saturation parts of MOSFET’s I-V characteristics as for velocity saturation and for electrostatic pinch-off effect cases. It was shown also that the same design formula is appropriate for description of I-V characteristics in bipolar transistors.

Paper Details

Date Published: 18 December 2014
PDF: 8 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944011 (18 December 2014); doi: 10.1117/12.2180607
Show Author Affiliations
G. I. Zebrev, National Research Nuclear Univ. MEPHI (Russian Federation)

Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top