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Proceedings Paper

Formation of fast neutral beams and their using for selective etching
Author(s): Yu. P. Maishev; S. L. Shevchuk; V. P. Kudrya
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Paper Abstract

Design and main characteristics of high performance fast neutral beam sources based on the ion sources with a cold cathode and a closed drift of electrons in crossed electrical and magnetic fields are described. The output beam is of practically 100% neutrality and has a low level of divergence (<5º) which provides long distance transportation of neutral beams. Etching results for Si, SiO2, W, NbN, TiN, and TiC with using the working gases Ar, CF4, C3F8, and SF6 are given. Preliminary results for the build-in charge decreasing effect for the Si/SiO2 interface under a neutral beam treatment are presented.

Paper Details

Date Published: 18 December 2014
PDF: 13 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400K (18 December 2014); doi: 10.1117/12.2180434
Show Author Affiliations
Yu. P. Maishev, Institute of Physics and Technology (Russian Federation)
S. L. Shevchuk, Institute of Physics and Technology (Russian Federation)
V. P. Kudrya, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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