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Proceedings Paper

High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures
Author(s): Yi Zhou; Jianxin Chen; Fangfang Wang; Zhicheng Xu; Zhizhong Bai; Chuan Jin; Li He
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Paper Abstract

The barrier enhanced InAs/GaSb long wavelength photodetectors were designed and demonstrated in this paper. A PBIN detector with an electron barrier inserted between P type contactor and absorption region show significantly improved electrical performances compared to a PIN structure. The RmaxA product of the PBIN detector was measured to be 104 Ωcm2 at 80K and 7360 Ωcm2 at 50K. Temperature dependent measurements show that the tunneling currents dominate the dark current below 50K, the generation-recombination (GR) currents dominate from 50K to 90K, and the diffusion current dominate over 90K. The PBIN structure benefits from a lower electric field in the absorption region and therefore, suppressed the tunnel currents and GR currents. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface, which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, hole barrier was designed without Al element to form a PBπBN structure. The RmaxA product of the PBπBN detector was measured to be 77 Ωcm2 and the dark current density under -0.05V bias was measured to be 8.8×10-4A/cm2 at 80K. The peak current responsivity at 9.8 μm was 2.15A/W and the quantum efficiency was 26.7%.

Paper Details

Date Published: 13 April 2015
PDF: 6 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952223 (13 April 2015); doi: 10.1117/12.2180425
Show Author Affiliations
Yi Zhou, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Fangfang Wang, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Zhizhong Bai, Shanghai Institute of Technical Physics (China)
Chuan Jin, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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