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Proceedings Paper

Thermal stability of atomic layer deposition Al2O3 film on HgCdTe
Author(s): P. Zhang; C. H. Sun; Y. Zhang; X. Chen; K. He; Y. Y. Chen; Z. H. Ye
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Paper Abstract

Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

Paper Details

Date Published: 22 June 2015
PDF: 5 pages
Proc. SPIE 9451, Infrared Technology and Applications XLI, 94512A (22 June 2015); doi: 10.1117/12.2180414
Show Author Affiliations
P. Zhang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
C. H. Sun, Shanghai Institute of Technical Physics (China)
Y. Zhang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
X. Chen, Shanghai Institute of Technical Physics (China)
K. He, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Y. Y. Chen, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Z. H. Ye, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9451:
Infrared Technology and Applications XLI
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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