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Proceedings Paper

Development of optically immersed, near-room-temperature HgCdTe photovoltaic detectors
Author(s): Hui Qiao; Reng Wang; Cuiling Jiao; Wei Gong; Xiangyang Li
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Paper Abstract

Optically immersed HgCdTe photovoltaic detectors in the 2.5 to 3.2 μm wavelength region operating at near room temperatures have been developed based on HgCdTe graded structure materials grown by opened tube isothermal vapor phase epitaxy (ISOVPE) method on lattice matched CdZnTe substrate. Fourier transformation infrared spectroscopy (FTIR) measurement combined with continuous step wet etching was applied to adjust the cutoff wavelength. The devices were designed and fabricated by traditional n-on-p planar junction process. Optical immersion of micro-lenses by CdZnTe substrate was used to improve the performance of the devices and the hyper-hemispherical micro-lens with a diameter of 1.5mm was made by single point diamond turning method. The optical response area was tested by laser beam induced current (LBIC) scanning measurement, and the result showed that the devices with hyper-hemispherical immersion micro-lens could get a 1mm×1mm response area as designed. The current-voltage characteristic of the devices were measured, and all the devices showed a little increase in the values of zero biased resistance, which was due to a decreased background radiation acceptance angle caused by a hyper-hemispherical structure. The photo response signal and dark noise were also measured before and after the micro-lens fabrication. The signal showed an increase by 20-30 times due to the enlarged photo response area, and the dark noise showed a little decrease which was also due to a limited background radiation acceptance angle. As a result, a multiple factor of four in detectivity enhancement could be achieved by the adoption of hyper-hemispherical immersion micro-lens structures.

Paper Details

Date Published: 13 April 2015
PDF: 9 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95221L (13 April 2015); doi: 10.1117/12.2180099
Show Author Affiliations
Hui Qiao, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Reng Wang, Shanghai Institute of Technical Physics (China)
Cuiling Jiao, Shanghai Institute of Technical Physics (China)
Wei Gong, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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