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Proceedings Paper

GaN grown by MOCVD and HVPE: morphology of porous layers fabricated by electrochemical etching techniques
Author(s): Ion M. Tiginyanu; Veaceslav Popa; Fiodor T. Braniste; Denis Martin; Andrei Sarua; James Thomas; Hugo D. Andrade; Jean-François Carlin; Nicolas Grandjean
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Paper Details

Date Published:
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Proc. SPIE 9519, Nanotechnology VII, 95190S; doi: 10.1117/12.2180088
Show Author Affiliations
Ion M. Tiginyanu, Academy of Sciences of Moldova (Moldova)
Veaceslav Popa, Technical Univ. of Moldova (Moldova)
Fiodor T. Braniste, Technical Univ. of Moldova (Moldova)
Denis Martin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Andrei Sarua, Univ. of Bristol (United Kingdom)
James Thomas, Univ. of Bristol (United Kingdom)
Hugo D. Andrade, Univ. of Bristol (United Kingdom)
Jean-François Carlin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)

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