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Proceedings Paper

Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors
Author(s): Yi Zhou; Jianxin Chen; Fangfang Wang; Zhicheng Xu; Zhizhong Bai; Chuan Jin; Li He
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Paper Abstract

The barrier enhanced InAs/GaSb long wavelength photodetectors were proved to have better performance. Our previous work showed a PBIN detector with an electron barrier inserted show significantly improved electrical performances compared to a PIN structure. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, both the abrupt and gradual hole barrier was designed without Al element to form a PBπBN structure. The gradual hole barrier was optimized to avoid the blocking of photo generated current, maximized the quantum efficiency. The RmaxA product of the PBπBN detector was measured to be 77 Ωcm2 and the dark current density under -0.05V bias was measured to be 8.8×10-4A/cm2 at 80K. The quantum efficiency of gradual hole barrier detector was measured to be 27.2% at 10.6 μm and the quantum efficiency was slowly decreased under reverse bias. The result shows the gradual hole barrier efficiently eliminate the peak barrier in the electron band. The peak detectivity of this graded detector is calculated to be 9.46×1010cm.Hz1/2.W-1 at 10.6 μm.

Paper Details

Date Published: 13 May 2015
PDF: 6 pages
Proc. SPIE 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 94810V (13 May 2015); doi: 10.1117/12.2179742
Show Author Affiliations
Yi Zhou, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Fangfang Wang, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Zhizhong Bai, Shanghai Institute of Technical Physics (China)
Chuan Jin, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9481:
Image Sensing Technologies: Materials, Devices, Systems, and Applications II
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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