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Proceedings Paper

A simplified analytical model of merged MOS
Author(s): V. Rakitin; A. Rakitin
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Paper Abstract

A two dimensional model of the merged MOSFET (MMOS), a new multigate device with ambipolar conductivity, is constructed and analyzed. Two variants of the MMOS (thin and thick channel) are considered. In the first case, the distribution of potential in the channel can be calculated, and dependency of electron and hole currents on the control voltages is expressed in exponential integral functions. In the second case transcendental equations must be solved to obtain the potential in the channel volume. Equations for determining currents in simplified conditions are derived. Examples of the input, output and transfer characteristics of the MMOS are given.

Paper Details

Date Published: 18 December 2014
PDF: 9 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944012 (18 December 2014); doi: 10.1117/12.2179602
Show Author Affiliations
V. Rakitin, F.V. Lukin Research Institute of Physical Problems (Russian Federation)
A. Rakitin, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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