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Proceedings Paper

Formation of Si nanocrystals in SiOx, SiOx:C:H films and Si/SiO2 multilayer nano-heterostructures by pulse laser treatments
Author(s): I. G. Neizvestniy; V. A. Volodin; A. A. Gismatulin; G. N. Kamaev; A. H. Antonenko; A. G. Cherkov; V. G. Litovchenko; I. P. Lisovsky; I. Yu. Maidanchuk
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Paper Abstract

Furnace annealing and pulse laser treatments, including nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration and XeCl laser 308 nm wavelength, 10 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous hydrogenated silicon films, SiOx films and multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of impurities on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on nonrefractory substrates.

Paper Details

Date Published: 18 December 2014
PDF: 11 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400F (18 December 2014); doi: 10.1117/12.2179349
Show Author Affiliations
I. G. Neizvestniy, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
V. A. Volodin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. A. Gismatulin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
G. N. Kamaev, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. H. Antonenko, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
A. G. Cherkov, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
V. G. Litovchenko, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
I. P. Lisovsky, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
I. Yu. Maidanchuk, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)

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