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Proceedings Paper

Investigation on the interface of polysilicon/oxide in CCD image sensors
Author(s): Naiman L.; Renhao L.; Chunlin L.
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Paper Abstract

The morphology of interface between polysilicon and its thermal oxide is very important for the fabrication of charge-coupled device (CCD) image sensors. Poor quality of polysilicon/oxide interface may lead to leakage current, low charge transfer efficiency, image deficiency, and then reduce the product yield and device reliability. In this paper, the effects polysilicon/oxide interface morphylogy on thermal oxide breakdown characteristics of polysilicon grown by low-pressure chemical vapor deposition (LPCVD) are studied by means of scanning electron microscopy (SEM) and electrical measurement. The breakdown characteristics of the oxide are related to the polysilicon/oxide interface smoothness. As the smoothness of polysilicon/oxide interface becomes worse, the breakdown strength of thermal oxide of the polysilicon decreases. Doping process of polysilicon remarkably affects the smoothness of polysilicon/oxide interface and the breakdown strength of the oxide. Saturated doping of polysilicon improves the polysilicon/oxide interface smoothness, so the breakdown strength of polysilicon may increase.

Paper Details

Date Published: 13 April 2015
PDF: 5 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220L (13 April 2015); doi: 10.1117/12.2179155
Show Author Affiliations
Naiman L., Chongqing Optoelectronics Research Institute (China)
Renhao L., Chongqing Optoelectronics Research Institute (China)
Chunlin L., Chongqing Optoelectronics Research Institute (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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